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Anti-Parallel APT2X100D120J
Parallel APT2X101D120J
SO
2 T-
27
"UL Recognized"
APT2X101D120J APT2X100D120J
1200V 1200V
93A 93A
ISOTOP (R)
file # E145592
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode * * * * *
-Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2X101_100D120J UNIT
1200
Volts
Maximum Average Forward Current (TC = 80C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range
93 115 1000 -55 to 175
C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = VR Rated VR = VR Rated, TJ = 125C MIN TYP MAX UNIT
2.0 2.3 1.8
2.5
Volts
250 500 120
Microsemi Website - http://www.microsemi.com
053-1201 Rev D
pF
9-2009
A
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MIN -
APT2X101_100D120J
TYP MAX UNIT ns nC
Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/s VR = 800V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800V, TC = 25C
47 420 1250 7 580 5350 19 220 10300 70 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJA WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight MIN TYP MAX UNIT C/W oz g
.41 20 1.03 29.2 10 1.1
Torque
Maximum Terminal & Mounting Torque
lb*in N*m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.45
, THERMAL IMPEDANCE (C/W)
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10
-5
0.9 0.7 0.5 0.3 0.1 0.05
10-4
Note:
PDM
t1 t2
JC
Z
SINGLE PULSE
10-3 10-2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1
1
RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-1201 Rev D 9-2009
TYPICAL PERFORMANCE CURVES
300 250 IF, FORWARD CURRENT (A) 200 150 100 TJ = 125C 50 TJ = -55C 0 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =800V
R
700 trr, REVERSE RECOVERY TIME (ns) 600 500 100A 400
APT2X101_100D120J
T =125C J V =800V
R
200A
TJ = 150C
50A 300 200 100 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 80
T =125C J V =800V
R
TJ = 25C
0
0
200
Qrr, REVERSE RECOVERY CHARGE (nC)
70 60 50 40 30 20 10 0 0
200A
200A 100A
50A
100A
50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 1.0 0.8 trr 0.6 0.4 0.2 0.0 IRRM trr Qrr
400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 140 120 100 IF(AV) (A) 80 60 40 20 0
Duty cycle = 0.5 T =150C
J
200
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 1200 CJ, JUNCTION CAPACITANCE (pF) 1000 800 600
0
100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
75
200 0
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
.6
1
053-1201 Rev D 9-2009
400
APT2X101_100D120J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT75GP120B2LL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anti-parallel
Parallel
APT2X100D120J
Anode 2
APT2X101D120J
Anode 1
Cathode 1 Cathode 1
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
053-1201 Rev D
9-2009
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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